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2DB1188Q-13123
Inventory:11
  • Qty Unit Price price
  • 1 $0.44 $0.44
  • 10 $0.435 $4.35
  • 100 $0.43 $43
  • 1000 $0.425 $425
  • 10000 $0.42 $4200

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2DB1188Q-13
  • Manufacturer No:
    2DB1188Q-13
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    2DB1188Q-13
  • SKU:
    1717510
  • Description:
    Bipolar Transistors - BJT 1000W -32Vceo

2DB1188Q-13 Details

Bipolar Transistors - BJT 1000W -32Vceo

2DB1188Q-13 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Pin Count: 4
  • Published: 2013
  • Peak Reflow Temperature (Cel): 260
  • Max Power Dissipation: 1W
  • Time@Peak Reflow Temperature-Max (s): 40
  • Element Configuration: Single
  • Factory Lead Time: 19 Weeks
  • Operating Temperature: -55°C~150°C TJ
  • Length: 4.5mm
  • Collector Emitter Breakdown Voltage: 32V
  • Max Breakdown Voltage: 32V
  • Emitter Base Voltage (VEBO): -5V
  • Polarity/Channel Type: PNP
  • Frequency: 120MHz
  • Transition Frequency: 120MHz
  • Case Connection: COLLECTOR
  • JESD-30 Code: R-PSSO-F3
  • Weight: 51.993025mg
  • Collector Emitter Saturation Voltage: -800mV
  • Base Part Number: 2DB1188
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Number of Pins: 4
  • Number of Terminations: 3
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn)
  • Power Dissipation: 1W
  • Transistor Element Material: SILICON
  • Max Collector Current: 2A
  • Collector Base Voltage (VCBO): 40V
  • Terminal Form: FLAT
  • Transistor Application: SWITCHING
  • Collector Emitter Voltage (VCEO): 32V
  • Height: 1.5mm
  • Transistor Type: PNP
  • Subcategory: Other Transistors
  • Gain Bandwidth Product: 120MHz
  • Current - Collector Cutoff (Max): 100nA ICBO
  • Package / Case: TO-243AA
  • Width: 2.48mm
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA 3V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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