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2N7002H-13123
  • Manufacturer No:
    2N7002H-13
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    1729142
  • Description:
    Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 170mA Ta 170mA 370mW Ta 60V
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  • Qty Unit Price price
  • 1 $0.033 $0.033
  • 10 $0.032 $0.32
  • 100 $0.031 $3.1
  • 1000 $0.03 $30
  • 10000 $0.029 $290

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2N7002H-13
  • Manufacturer No:
    2N7002H-13
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    2N7002H-13
  • SKU:
    1729142
  • Description:
    Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 170mA Ta 170mA 370mW Ta 60V

2N7002H-13 Details

Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 170mA Ta 170mA 370mW Ta 60V

2N7002H-13 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Terminal Position: DUAL
  • Number of Terminations: 3
  • Drain to Source Voltage (Vdss): 60V
  • Factory Lead Time: 14 Weeks
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Terminal Finish: Matte Tin (Sn) - annealed
  • Vgs (Max): ±20V
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID): 170mA
  • Reference Standard: AEC-Q101
  • Drain Current-Max (Abs) (ID): 0.17A
  • Power Dissipation-Max: 370mW Ta
  • Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Drive Voltage (Max Rds On,Min Rds On): 5V
  • Terminal Form: GULL WING
  • DS Breakdown Voltage-Min: 60V
  • Transistor Element Material: SILICON
  • Published: 2000
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Additional Feature: HIGH RELIABILITY
  • JESD-30 Code: R-PDSO-G3
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • HTS Code: 8541.21.00.95
  • Current - Continuous Drain (Id) @ 25°C: 170mA Ta
  • Rds On (Max) @ Id, Vgs: 7.5 Ω @ 50mA, 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 25V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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