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BC847B-7-F123
  • Manufacturer No:
    BC847B-7-F
  • Manufacturer:
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    1797740
  • Description:
    DIODES INC. - BC847B-7-F - Bipolar (BJT) Single Transistor, NPN, 45 V, 300 MHz, 300 mW, 100 mA, 330 hFE
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Inventory:234000
  • Qty Unit Price price
  • 1 $0.042 $0.042
  • 10 $0.041 $0.41
  • 100 $0.04 $4
  • 1000 $0.039 $39
  • 10000 $0.038 $380

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BC847B-7-F
  • Manufacturer No:
    BC847B-7-F
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    BC847B-7-F
  • SKU:
    1797740
  • Description:
    DIODES INC. - BC847B-7-F - Bipolar (BJT) Single Transistor, NPN, 45 V, 300 MHz, 300 mW, 100 mA, 330 hFE

BC847B-7-F Details

DIODES INC. - BC847B-7-F - Bipolar (BJT) Single Transistor, NPN, 45 V, 300 MHz, 300 mW, 100 mA, 330 hFE

BC847B-7-F Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Qualification Status: Not Qualified
  • Terminal Form: GULL WING
  • Published: 2012
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Emitter Base Voltage (VEBO): 6V
  • Factory Lead Time: 19 Weeks
  • Width: 1.4mm
  • Height: 1.1mm
  • Transistor Type: NPN
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Additional Feature: HIGH RELIABILITY
  • Collector Emitter Breakdown Voltage: 45V
  • Max Breakdown Voltage: 45V
  • Length: 3.05mm
  • Gain Bandwidth Product: 300MHz
  • Weight: 7.994566mg
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA 5V
  • Base Part Number: BC847
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 3
  • Pin Count: 3
  • Collector Base Voltage (VCBO): 50V
  • REACH SVHC: No SVHC
  • Peak Reflow Temperature (Cel): 260
  • Max Junction Temperature (Tj): 150°C
  • Element Configuration: Single
  • Current - Collector (Ic) (Max): 100mA
  • Max Collector Current: 200mA
  • Transistor Application: SWITCHING
  • hFE Min: 200
  • Polarity/Channel Type: NPN
  • Operating Temperature: -65°C~150°C TJ
  • Max Power Dissipation: 300mW
  • Collector Emitter Voltage (VCEO): 45V
  • Subcategory: Other Transistors
  • Frequency: 300MHz
  • Transition Frequency: 300MHz
  • Current - Collector Cutoff (Max): 15nA
  • Power Dissipation: 310mW
  • Collector Emitter Saturation Voltage: 90mV

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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