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DMG4407SSS-13123
Inventory:21157
  • Qty Unit Price price
  • 1 $0.688 $0.688
  • 10 $0.681 $6.81
  • 100 $0.674 $67.4
  • 1000 $0.667 $667
  • 10000 $0.66 $6600

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DMG4407SSS-13
  • Manufacturer No:
    DMG4407SSS-13
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    DMG4407SSS-13
  • SKU:
    1783967
  • Description:
    Trans MOSFET P-CH 30V 9.9A 8-Pin SO T/R

DMG4407SSS-13 Details

Trans MOSFET P-CH 30V 9.9A 8-Pin SO T/R

DMG4407SSS-13 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Pin Count: 8
  • Published: 2013
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn)
  • Factory Lead Time: 7 Weeks
  • Transistor Element Material: SILICON
  • DS Breakdown Voltage-Min: 30V
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: Other Transistors
  • FET Type: P-Channel
  • Fall Time (Typ): 22 ns
  • Turn-Off Delay Time: 38 ns
  • Continuous Drain Current (ID): 9.9A
  • Weight: 73.992255mg
  • Turn On Delay Time: 11.3 ns
  • Rds On (Max) @ Id, Vgs: 11m Ω @ 12A, 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2246pF @ 15V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Part Status: Obsolete
  • Number of Terminations: 8
  • Terminal Position: DUAL
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Gate to Source Voltage (Vgs): 25V
  • Drain to Source Voltage (Vdss): 30V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Transistor Application: SWITCHING
  • Additional Feature: HIGH RELIABILITY
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Vgs (Max): ±25V
  • Drive Voltage (Max Rds On,Min Rds On): 6V 10V
  • Operating Temperature: -50°C~150°C TJ
  • Rise Time: 15.4 ns
  • Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A Ta
  • Power Dissipation-Max: 1.45W Ta

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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