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DMN30H4D0LFDE-13123
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DMN30H4D0LFDE-13
  • Manufacturer No:
    DMN30H4D0LFDE-13
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    DMN30H4D0LFDE-13
  • SKU:
    1812009
  • Description:
    MOSFET N-CH 300V 0.55A 6UDFN

DMN30H4D0LFDE-13 Details

MOSFET N-CH 300V 0.55A 6UDFN

DMN30H4D0LFDE-13 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Drain to Source Voltage (Vdss): 300V
  • Published: 2014
  • Factory Lead Time: 22 Weeks
  • Technology: MOSFET (Metal Oxide)
  • Continuous Drain Current (ID): 550mA
  • Vgs(th) (Max) @ Id: 2.8V @ 250μA
  • Power Dissipation-Max: 630mW Ta
  • Rds On (Max) @ Id, Vgs: 4 Ω @ 300mA, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • JESD-609 Code: e4
  • Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Package / Case: 6-UDFN Exposed Pad
  • Drive Voltage (Max Rds On,Min Rds On): 2.7V 10V
  • Current - Continuous Drain (Id) @ 25°C: 550mA Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 187.3pF @ 25V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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