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DMNH10H028SPSQ-13123
Inventory:1761
  • Qty Unit Price price
  • 1 $337.693 $337.693
  • 10 $334.349 $3343.49
  • 100 $331.038 $33103.8
  • 1000 $327.76 $327760
  • 10000 $324.514 $3245140

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DMNH10H028SPSQ-13
  • Manufacturer No:
    DMNH10H028SPSQ-13
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    DMNH10H028SPSQ-13
  • SKU:
    1741423
  • Description:
    MOSFET N-CH 100V 40A POWERDI506

DMNH10H028SPSQ-13 Details

MOSFET N-CH 100V 40A POWERDI506

DMNH10H028SPSQ-13 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Pins: 8
  • Number of Terminations: 5
  • DS Breakdown Voltage-Min: 100V
  • Terminal Finish: Matte Tin (Sn)
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Factory Lead Time: 17 Weeks
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Additional Feature: HIGH RELIABILITY
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Reference Standard: AEC-Q101
  • Pulsed Drain Current-Max (IDM): 54A
  • Power Dissipation-Max: 1.6W Ta
  • Avalanche Energy Rating (Eas): 35 mJ
  • Input Capacitance (Ciss) (Max) @ Vds: 2245pF @ 50V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Terminal Position: DUAL
  • Drain to Source Voltage (Vdss): 100V
  • Published: 2015
  • Reach Compliance Code: not_compliant
  • Transistor Element Material: SILICON
  • Terminal Form: FLAT
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Continuous Drain Current (ID): 40A
  • Case Connection: DRAIN
  • JESD-30 Code: R-PDSO-F5
  • Package / Case: 8-PowerTDFN
  • Current - Continuous Drain (Id) @ 25°C: 40A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Rds On (Max) @ Id, Vgs: 28m Ω @ 20A, 10V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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