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DMP3085LSD-13123
Inventory:276658
  • Qty Unit Price price
  • 1 $554.243 $554.243
  • 10 $548.755 $5487.55
  • 100 $543.321 $54332.1
  • 1000 $537.941 $537941
  • 10000 $532.614 $5326140

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DMP3085LSD-13
  • Manufacturer No:
    DMP3085LSD-13
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    DMP3085LSD-13
  • SKU:
    1736132
  • Description:
    MOSFET 2P-CH 30V 3.9A 8SO

DMP3085LSD-13 Details

MOSFET 2P-CH 30V 3.9A 8SO

DMP3085LSD-13 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Mount: Surface Mount
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 8
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 30V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Operating Mode: ENHANCEMENT MODE
  • Factory Lead Time: 23 Weeks
  • Height: 1.7mm
  • Packaging: Digi-Reel?
  • Length: 4.95mm
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Reference Standard: AEC-Q101
  • Max Power Dissipation: 1.1W
  • Turn On Delay Time: 4.8 ns
  • FET Type: 2 P-Channel (Dual)
  • Drain-source On Resistance-Max: 0.07Ohm
  • Fall Time (Typ): 14.6 ns
  • Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Published: 2013
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn)
  • Max Junction Temperature (Tj): 150°C
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Additional Feature: HIGH RELIABILITY
  • Subcategory: Other Transistors
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Rise Time: 5 ns
  • Current - Continuous Drain (Id) @ 25°C: 3.9A
  • FET Feature: Logic Level Gate
  • Drain to Source Breakdown Voltage: -30V
  • Power Dissipation: 1.1W
  • Width: 3.95mm
  • Turn-Off Delay Time: 31 ns
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Continuous Drain Current (ID): -3.9A
  • Rds On (Max) @ Id, Vgs: 70m Ω @ 5.3A, 10V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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