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ZVN4210GTA123
Inventory:735
  • Qty Unit Price price
  • 1 $1.175 $1.175
  • 10 $1.163 $11.63
  • 100 $1.151 $115.1
  • 1000 $1.139 $1139
  • 10000 $1.127 $11270

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ZVN4210GTA
  • Manufacturer No:
    ZVN4210GTA
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    ZVN4210GTA
  • SKU:
    1761519
  • Description:
    MOSFET N-CH 100V 800MA SOT223

ZVN4210GTA Details

MOSFET N-CH 100V 800MA SOT223

ZVN4210GTA Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Channels: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 4
  • Pin Count: 4
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Drain to Source Breakdown Voltage: 100V
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Power Dissipation: 2W
  • Gate to Source Voltage (Vgs): 20V
  • Packaging: Cut Tape (CT)
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Continuous Drain Current (ID): 800mA
  • Height: 1.65mm
  • Turn-Off Delay Time: 20 ns
  • Length: 6.7mm
  • Rise Time: 8 ns
  • Package / Case: TO-261-4, TO-261AA
  • Weight: 7.994566mg
  • Drive Voltage (Max Rds On,Min Rds On): 5V 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Current - Continuous Drain (Id) @ 25°C: 800mA Ta
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Number of Terminations: 4
  • Pbfree Code: no
  • REACH SVHC: No SVHC
  • Voltage - Rated DC: 100V
  • Terminal Finish: Matte Tin (Sn)
  • Published: 2006
  • Element Configuration: Single
  • Factory Lead Time: 17 Weeks
  • Operating Temperature: -55°C~150°C TJ
  • Pulsed Drain Current-Max (IDM): 6A
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Current Rating: 800mA
  • Case Connection: DRAIN
  • Threshold Voltage: 800mV
  • Fall Time (Typ): 30 ns
  • Width: 3.7mm
  • Turn On Delay Time: 4 ns
  • Resistance: 1.8Ohm
  • Drain Current-Max (Abs) (ID): 0.8A
  • Power Dissipation-Max: 2W Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
  • Rds On (Max) @ Id, Vgs: 1.5 Ω @ 1.5A, 10V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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