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ZXMN2F34MATA123
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ZXMN2F34MATA
  • Manufacturer No:
    ZXMN2F34MATA
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    ZXMN2F34MATA
  • SKU:
    1771244
  • Description:
    MOSFET 20V N-Channel Enhance. Mode MOSFET

ZXMN2F34MATA Details

MOSFET 20V N-Channel Enhance. Mode MOSFET

ZXMN2F34MATA Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Part Status: Obsolete
  • Number of Terminations: 3
  • Pin Count: 3
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn)
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Drain to Source Breakdown Voltage: 20V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Terminal Form: C BEND
  • Threshold Voltage: 800mV
  • Length: 2.1mm
  • Resistance: 60mOhm
  • Continuous Drain Current (ID): 5.1A
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Fall Time (Typ): 5.1 ns
  • Power Dissipation: 1.35W
  • Current - Continuous Drain (Id) @ 25°C: 4A Ta
  • Turn On Delay Time: 2.65 ns
  • Power Dissipation-Max: 1.35W Ta
  • Rds On (Max) @ Id, Vgs: 60m Ω @ 2.5A, 4.5V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Termination: SMD/SMT
  • Peak Reflow Temperature (Cel): 260
  • Gate to Source Voltage (Vgs): 12V
  • Published: 2008
  • Element Configuration: Single
  • Dual Supply Voltage: 20V
  • Drain Current-Max (Abs) (ID): 4A
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Height: 950μm
  • Width: 2.1mm
  • Vgs (Max): ±12V
  • Subcategory: FET General Purpose Powers
  • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
  • Rise Time: 4.2ns
  • Turn-Off Delay Time: 9.9 ns
  • Nominal Vgs: 800 mV
  • Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 277pF @ 10V
  • Package / Case: 3-VDFN

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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