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ZXMN3A02N8TA123
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ZXMN3A02N8TA
  • Manufacturer No:
    ZXMN3A02N8TA
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    ZXMN3A02N8TA
  • SKU:
    1754455
  • Description:
    MOSFET 30V N Chnl UMOS

ZXMN3A02N8TA Details

MOSFET 30V N Chnl UMOS

ZXMN3A02N8TA Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • Part Status: Obsolete
  • Number of Terminations: 8
  • Terminal Position: DUAL
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • Published: 2006
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Breakdown Voltage: 30V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Current Rating: 9A
  • Continuous Drain Current (ID): 9A
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • Turn On Delay Time: 3.9 ns
  • Drain-source On Resistance-Max: 0.025Ohm
  • Weight: 73.992255mg
  • Power Dissipation-Max: 1.56W Ta
  • Rds On (Max) @ Id, Vgs: 25m Ω @ 12A, 10V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Pin Count: 8
  • Qualification Status: Not Qualified
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 30V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Subcategory: FET General Purpose Power
  • Drain Current-Max (Abs) (ID): 9A
  • Power Dissipation: 2.5W
  • Turn-Off Delay Time: 35 ns
  • Fall Time (Typ): 5.5 ns
  • Rise Time: 5.5ns
  • Additional Feature: LOW THRESHOLD
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A Ta
  • Gate Charge (Qg) (Max) @ Vgs: 26.8nC @ 10V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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