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- Manufacturer No：ZXMN3A06DN8TA
- Manufacturer：Diodes Incorporated
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：ZXMN3A06DN8TA
- SKU：1821338
- Description：MOSFET 2N-CH 30V 4.9A 8-SOIC
User Guide
User Guide
ZXMN3A06DN8TA Details
MOSFET 2N-CH 30V 4.9A 8-SOIC
ZXMN3A06DN8TA Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Element Configuration: Dual
- Transistor Element Material: SILICON
- Factory Lead Time: 17 Weeks
- Voltage - Rated DC: 30V
- Dual Supply Voltage: 30V
- Operating Temperature: -55°C~150°C TJ
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Operating Mode: ENHANCEMENT MODE
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- FET Feature: Logic Level Gate
- FET Type: 2 N-Channel (Dual)
- Resistance: 35mOhm
- Drain Current-Max (Abs) (ID): 4.9A
- Subcategory: FET General Purpose Powers
- Max Power Dissipation: 2.1W
- Nominal Vgs: 1 V
- Fall Time (Typ): 9.4 ns
- Turn-Off Delay Time: 21.6 ns
- Rds On (Max) @ Id, Vgs: 35m Ω @ 9A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2006
- Length: 5mm
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Breakdown Voltage: 30V
- Width: 4mm
- Threshold Voltage: 1V
- Transistor Application: SWITCHING
- Height: 1.5mm
- Turn On Delay Time: 3 ns
- Power - Max: 1.8W
- Current Rating: 4.8A
- Continuous Drain Current (ID): 6.2A
- Current - Continuous Drain (Id) @ 25°C: 4.9A
- Power Dissipation: 2.1W
- Rise Time: 6.4 ns
- Weight: 73.992255mg
- Vgs(th) (Max) @ Id: 1V @ 250μA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
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Diodes Incorporated — Manufacturer Introduction
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
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