MB85R256HPF-G-BND-ERAE1FUJITSU LTD
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    MB85R256HPF-G-BND-ERAE1123
    • Manufacturer No：
      MB85R256HPF-G-BND-ERAE1
    • Manufacturer：
      FUJITSU LTD
    • Category：
    • Datasheet：
    • SKU：
      10932796
    • Description：
    • Quantity：
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    MB85R256HPF-G-BND-ERAE1
    • Manufacturer No：
      MB85R256HPF-G-BND-ERAE1
    • Manufacturer：
      FUJITSU LTD
    • Category：
    • Datasheet：
      MB85R256HPF-G-BND-ERAE1
    • SKU：
      10932796
    • Description：

    User Guide

    User Guide

    MB85R256HPF-G-BND-ERAE1 Details

    MB85R256HPF-G-BND-ERAE1 Specification Parameters

    • Number of Functions: 1
    • Surface Mount: YES
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Terminal Position: DUAL
    • Power Supplies: 3.3V
    • Operating Temperature (Min): -40°C
    • Technology: CMOS
    • Terminal Pitch: 1.27mm
    • Reach Compliance Code: compliant
    • Supply Voltage-Max (Vsup): 3.6V
    • Seated Height-Max: 2.8mm
    • Subcategory: SRAMs
    • Access Time (Max): 70 ns
    • Width: 8.6mm
    • Organization: 32KX8
    • Standby Current-Max: 0.00005A
    • Length: 17.75mm
    • RoHS Status: RoHS Compliant
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Memory Width: 8
    • Supply Voltage: 3.3V
    • Qualification Status: Not Qualified
    • Terminal Form: GULL WING
    • Operating Temperature (Max): 85°C
    • Number of Terminals: 28
    • Temperature Grade: INDUSTRIAL
    • Supply Voltage-Min (Vsup): 2.7V
    • Operating Mode: ASYNCHRONOUS
    • JESD-30 Code: R-PDSO-G28
    • Supply Current-Max: 0.01mA
    • HTS Code: 8542.32.00.71
    • Memory Density: 262144 bit
    • Memory IC Type: MEMORY CIRCUIT
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