FQB10N20CTMFairchild Semiconductor
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    FQB10N20CTM123
    • Manufacturer No：
      FQB10N20CTM
    • Manufacturer：
      Fairchild Semiconductor
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
    • SKU：
      3582718
    • Description：
      N-Channel 200 V 9.5A (Tc) 72W (Tc) Surface Mount D?PAK (TO-263AB)
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    FQB10N20CTM
    • Manufacturer No：
      FQB10N20CTM
    • Manufacturer：
      Fairchild Semiconductor
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      FQB10N20CTM
    • SKU：
      3582718
    • Description：
      N-Channel 200 V 9.5A (Tc) 72W (Tc) Surface Mount D?PAK (TO-263AB)

    User Guide

    User Guide

    FQB10N20CTM Details

    N-Channel 200 V 9.5A (Tc) 72W (Tc) Surface Mount D?PAK (TO-263AB)

    FQB10N20CTM Specification Parameters

    • Package: Bulk
    • Mounting Type: Surface Mount
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Technology: MOSFET (Metal Oxide)
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Category: Discrete Semiconductor Products/Transistors - FETs, MOSFETs - Single
    • Vgs (Max): ±30V
    • Series: QFET?
    • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
    • Power Dissipation (Max): 72W (Tc)
    • Rds On (Max) @ Id, Vgs: 360mOhm @ 4.75A, 10V
    • FET Feature: -
    • Part Status: Obsolete
    • FET Type: N-Channel
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Mfr: Fairchild Semiconductor
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Drain to Source Voltage (Vdss): 200 V
    • Supplier Device Package: D2PAK (TO-263AB)
    • Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
    • Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
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