FQPF8N60CYDTUFairchild Semiconductor
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    FQPF8N60CYDTU123
    • Manufacturer No：
      FQPF8N60CYDTU
    • Manufacturer：
      Fairchild Semiconductor
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
    • SKU：
      3582369
    • Description：
      N-Channel 600 V 7.5A (Tc) 48W (Tc) Through Hole TO-220F-3 (Y-Forming)
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    FQPF8N60CYDTU
    • Manufacturer No：
      FQPF8N60CYDTU
    • Manufacturer：
      Fairchild Semiconductor
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      FQPF8N60CYDTU
    • SKU：
      3582369
    • Description：
      N-Channel 600 V 7.5A (Tc) 48W (Tc) Through Hole TO-220F-3 (Y-Forming)

    User Guide

    User Guide

    FQPF8N60CYDTU Details

    N-Channel 600 V 7.5A (Tc) 48W (Tc) Through Hole TO-220F-3 (Y-Forming)

    FQPF8N60CYDTU Specification Parameters

    • FET Feature: -
    • Part Status: Obsolete
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Technology: MOSFET (Metal Oxide)
    • Mfr: Fairchild Semiconductor
    • Drain to Source Voltage (Vdss): 600 V
    • Vgs (Max): ±30V
    • Package / Case: TO-220-3 Full Pack, Formed Leads
    • Power Dissipation (Max): 48W (Tc)
    • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 1.255 pF @ 25 V
    • Mounting Type: Through Hole
    • Package: Tube
    • FET Type: N-Channel
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Category: Discrete Semiconductor Products/Transistors - FETs, MOSFETs - Single
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Series: QFET?
    • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
    • Supplier Device Package: TO-220F-3 (Y-Forming)
    • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
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