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- Manufacturer No：KBL410G
- Manufacturer：GeneSiC Semiconductor
- Category：Diodes - Bridge Rectifiers
- Datasheet：KBL410G
- SKU：9119265
- Description：Bulk Through Hole Single Phase BRIDGE 4ELEMENTS Bridge Rectifier 1.1V @ 4A 5muA @ 1000V 1000V 250.25kV
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User Guide
KBL410G Details
Bulk Through Hole Single Phase BRIDGE 4ELEMENTS Bridge Rectifier 1.1V @ 4A 5muA @ 1000V 1000V 250.25kV
KBL410G Specification Parameters
- Part Status: Active
- Packaging: Bulk
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Termination: Solder
- Number of Elements: 4
- Factory Lead Time: 4 Weeks
- Pitch: 2mm
- Peak Reverse Current: 5A
- Technology: Standard
- Max Repetitive Reverse Voltage (Vrrm): 1kV
- Output Current-Max: 4A
- Max Reverse Leakage Current: 5μA
- Diode Type: Single Phase
- Configuration: BRIDGE, 4 ELEMENTS
- Max Voltage Rating (DC): 250.25kV
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
- JESD-30 Code: R-PSIP-W4
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Number of Phases: 1
- Pbfree Code: yes
- Number of Terminations: 4
- Terminal Form: WIRE
- Orientation: Straight
- Published: 2010
- Diode Element Material: SILICON
- Number of Contacts: 28
- Voltage - Peak Reverse (Max): 1kV
- Forward Current: 4A
- Breakdown Voltage-Min: 1000V
- Max Surge Current: 120A
- Current - Reverse Leakage @ Vr: 5μA @ 1000V
- Lifecycle Status: PRODUCTION (Last Updated: 6 months ago)
- Operating Temperature: -50°C~150°C TJ
- Package / Case: 4-SIP, KBL
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GeneSiC Semiconductor — Manufacturer Introduction
GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products. GeneSiC technology plays a key enabling role in conserving energy in a wide array of high power systems. Ourtechnology enables efficient harvesting of renewable energy sources.
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