123
Inventory:3022
- Qty Unit Price price
- 1 $3.072 $3.072
- 10 $3.041 $30.41
- 100 $3.01 $301
- 1000 $2.98 $2980
- 10000 $2.95 $29500
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- Manufacturer No：IRF3808S
- Manufacturer：INTERNATIONAL RECTIFIER CORP
- Category：
- Datasheet：IRF3808S
- SKU：12369164
- Description：
User Guide
User Guide
IRF3808S Details
IRF3808S Specification Parameters
- Number of Terminals: 2
- Moisture Sensitivity Level (MSL): 1
- RoHS Status: Non-RoHS Compliant
- Pin Count: 3
- JESD-609 Code: e0
- Time@Peak Reflow Temperature-Max (s): 30
- Operating Temperature (Max): 175°C
- DS Breakdown Voltage-Min: 75V
- Power Dissipation-Max (Abs): 200W
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Case Connection: DRAIN
- Polarity/Channel Type: N-CHANNEL
- HTS Code: 8541.29.00.95
- Pulsed Drain Current-Max (IDM): 550A
- Drain-source On Resistance-Max: 0.007Ohm
- Avalanche Energy Rating (Eas): 430 mJ
- Number of Elements: 1
- ECCN Code: EAR99
- Surface Mount: YES
- Qualification Status: Not Qualified
- Terminal Form: GULL WING
- Terminal Finish: Tin/Lead (Sn/Pb)
- Transistor Element Material: SILICON
- Terminal Position: SINGLE
- Transistor Application: SWITCHING
- Peak Reflow Temperature (Cel): 225
- Configuration: SINGLE WITH BUILT-IN DIODE
- Subcategory: FET General Purpose Power
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code: TO-263AB
- Additional Feature: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Drain Current-Max (Abs) (ID): 106A
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