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- Manufacturer No：IS43QR16256A-093PBL
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：
- SKU：2687674
- Description：Active BOTTOM Volatile SYNCHRONOUS ic memory 0C~95C TC 1.14V 4294967296bit 9mm
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- Manufacturer No：IS43QR16256A-093PBL
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：IS43QR16256A-093PBL
- SKU：2687674
- Description：Active BOTTOM Volatile SYNCHRONOUS ic memory 0C~95C TC 1.14V 4294967296bit 9mm
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User Guide
IS43QR16256A-093PBL Details
Active BOTTOM Volatile SYNCHRONOUS ic memory 0C~95C TC 1.14V 4294967296bit 9mm
IS43QR16256A-093PBL Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Ports: 1
- Surface Mount: YES
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Memory Width: 16
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- Supply Voltage: 1.2V
- Memory Type: Volatile
- Length: 13mm
- Memory Format: DRAM
- Voltage - Supply: 1.14V~1.26V
- Supply Voltage-Min (Vsup): 1.14V
- Operating Temperature: 0°C~95°C TC
- JESD-30 Code: R-PBGA-B96
- Memory Size: 4Gb 256M x 16
- Technology: SDRAM - DDR4
- Clock Frequency: 1.066GHz
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tray
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Terminal Pitch: 0.8mm
- Height Seated (Max): 1.2mm
- Width: 9mm
- Number of Terminations: 96
- Operating Mode: SYNCHRONOUS
- Write Cycle Time - Word, Page: 15ns
- Additional Feature: AUTO/SELF REFRESH
- Supply Voltage-Max (Vsup): 1.26V
- Package / Case: 96-TFBGA
- Memory Density: 4294967296 bit
- Access Mode: MULTI BANK PAGE BURST
- Organization: 256MX16
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