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- Manufacturer No：IS45S32400E-6TLA1
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：IS45S32400E-6TLA1
- SKU：2670292
- Description：Obsolete 3-STATE DUAL Volatile ic memory -40C~85C TA 3V 128Mb 180mA
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IS45S32400E-6TLA1 Details
Obsolete 3-STATE DUAL Volatile ic memory -40C~85C TA 3V 128Mb 180mA
IS45S32400E-6TLA1 Specification Parameters
- Mounting Type: Surface Mount
- Number of Functions: 1
- RoHS Status: RoHS Compliant
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Operating Supply Voltage: 3.3V
- Peak Reflow Temperature (Cel): 260
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Memory Width: 32
- Terminal Pitch: 0.5mm
- Memory Interface: Parallel
- Output Characteristics: 3-STATE
- Voltage - Supply: 3V~3.6V
- Number of Terminations: 86
- Pin Count: 86
- I/O Type: COMMON
- Clock Frequency: 166MHz
- Refresh Cycles: 4096
- Technology: SDRAM
- Length: 22.22mm
- Sequential Burst Length: 1248FP
- Address Bus Width: 14b
- HTS Code: 8542.32.00.02
- Package / Case: 86-TFSOP (0.400, 10.16mm Width)
- Mount: Surface Mount
- Number of Ports: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Supply Voltage: 3.3V
- Packaging: Tray
- Time@Peak Reflow Temperature-Max (s): 10
- Supply Voltage-Min (Vsup): 3V
- Operating Temperature: -40°C~85°C TA
- Supply Voltage-Max (Vsup): 3.6V
- Height Seated (Max): 1.2mm
- Memory Type: Volatile
- Terminal Finish: Matte Tin (Sn) - annealed
- Number of Pins: 86
- Data Bus Width: 32b
- Memory Format: DRAM
- Nominal Supply Current: 180mA
- Additional Feature: AUTO/SELF REFRESH
- Access Time: 5.4ns
- Interleaved Burst Length: 1248
- Standby Current-Max: 0.001A
- Density: 128 Mb
- Memory Size: 128Mb 4M x 32
- Organization: 4MX32
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