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- Manufacturer No：IS46LR16320C-6BLA1
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：IS46LR16320C-6BLA1
- SKU：2685030
- Description：Active 3-STATE AEC-Q100 BOTTOM ic memory -40C~85C TA 1.7V 16b 60mA
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IS46LR16320C-6BLA1 Details
Active 3-STATE AEC-Q100 BOTTOM ic memory -40C~85C TA 1.7V 16b 60mA
IS46LR16320C-6BLA1 Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Ports: 1
- Packaging: Tray
- Memory Width: 16
- Factory Lead Time: 14 Weeks
- Operating Supply Voltage: 1.8V
- Length: 10mm
- Number of Pins: 60
- Terminal Pitch: 0.8mm
- Output Characteristics: 3-STATE
- Memory Type: Volatile
- Supply Voltage-Min (Vsup): 1.7V
- Data Bus Width: 16b
- I/O Type: COMMON
- Clock Frequency: 166MHz
- Refresh Cycles: 8192
- Additional Feature: AUTO/SELF REFRESH
- Memory Density: 536870912 bit
- Access Time: 5.5ns
- Organization: 32MX16
- Interleaved Burst Length: 24816
- Standby Current-Max: 0.0003A
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- Surface Mount: YES
- Qualification Status: Not Qualified
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage: 1.8V
- Operating Temperature: -40°C~85°C TA
- Terminal Position: BOTTOM
- Number of Terminations: 60
- Memory Interface: Parallel
- Height Seated (Max): 1.1mm
- Max Supply Current: 60mA
- Screening Level: AEC-Q100
- Operating Mode: SYNCHRONOUS
- Memory Format: DRAM
- Write Cycle Time - Word, Page: 15ns
- Supply Voltage-Max (Vsup): 1.95V
- Voltage - Supply: 1.7V~1.95V
- Memory Size: 512Mb 32M x 16
- Package / Case: 60-TFBGA
- Technology: SDRAM - Mobile LPDDR
- Sequential Burst Length: 24816
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