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- Manufacturer No：IS61LV12824-10TQI
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：IS61LV12824-10TQI
- SKU：2668891
- Description：Asynchronous Not For New Designs 3-STATE QUAD ic memory -40C~85C TA 2.97V 3Mb 210mA
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IS61LV12824-10TQI Details
Asynchronous Not For New Designs 3-STATE QUAD ic memory -40C~85C TA 2.97V 3Mb 210mA
IS61LV12824-10TQI Specification Parameters
- Mounting Type: Surface Mount
- Number of Ports: 1
- Surface Mount: YES
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Operating Supply Voltage: 3.3V
- Pbfree Code: no
- JESD-609 Code: e0
- Standby Voltage-Min: 3V
- Terminal Finish: Tin/Lead (Sn/Pb)
- Terminal Position: QUAD
- Number of Pins: 100
- Part Status: Not For New Designs
- Memory Interface: Parallel
- Length: 20mm
- Memory Format: SRAM
- Package / Case: 100-LQFP
- I/O Type: COMMON
- Supply Voltage-Min (Vsup): 2.97V
- Standby Current-Max: 0.02A
- Address Bus Width: 17b
- Word Size: 24b
- Density: 3 Mb
- Number of Functions: 1
- RoHS Status: Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Supply Voltage: 3.3V
- Packaging: Tray
- Qualification Status: Not Qualified
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Memory Width: 24
- Operating Temperature: -40°C~85°C TA
- Number of Terminations: 100
- Pin Count: 100
- Terminal Pitch: 0.65mm
- Output Characteristics: 3-STATE
- Memory Type: Volatile
- Write Cycle Time - Word, Page: 10ns
- Supply Voltage-Max (Vsup): 3.63V
- Sync/Async: Asynchronous
- Technology: SRAM - Asynchronous
- Nominal Supply Current: 210mA
- Voltage - Supply: 3.135V~3.6V
- Memory Size: 3Mb 128K x 24
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