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- Manufacturer No：IS61NVF51236-7.5B3I
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：IS61NVF51236-7.5B3I
- SKU：2679392
- Description：Active 3-STATE BOTTOM Volatile ic memory -40C~85C TA 2.375V 18874368bit 0.075A
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IS61NVF51236-7.5B3I Details
Active 3-STATE BOTTOM Volatile ic memory -40C~85C TA 2.375V 18874368bit 0.075A
IS61NVF51236-7.5B3I Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Surface Mount: YES
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Pbfree Code: no
- JESD-609 Code: e0
- Power Supplies: 2.5V
- Terminal Finish: Tin/Lead (Sn/Pb)
- Terminal Pitch: 1mm
- Memory Width: 36
- Height Seated (Max): 1.2mm
- Length: 15mm
- Memory Format: SRAM
- Voltage - Supply: 2.375V~2.625V
- Supply Voltage-Min (Vsup): 2.375V
- Number of Pins: 165
- Pin Count: 165
- ECCN Code: 3A991.B.2.A
- Standby Current-Max: 0.075A
- Standby Voltage-Min: 2.38V
- Package / Case: 165-TBGA
- Memory Density: 18874368 bit
- Clock Frequency: 117MHz
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tray
- Qualification Status: Not Qualified
- Supply Voltage: 2.5V
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Operating Temperature: -40°C~85°C TA
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- Output Characteristics: 3-STATE
- Memory Type: Volatile
- Width: 13mm
- I/O Type: COMMON
- Supply Voltage-Max (Vsup): 2.625V
- Number of Terminations: 165
- HTS Code: 8542.32.00.41
- Technology: SRAM - Synchronous, SDR
- Access Time: 7.5ns
- Memory Size: 18Mb 512K x 36
- Additional Feature: FLOW-THROUGH ARCHITECTURE
- Organization: 512KX36
- Supply Current-Max: 0.475mA
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