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- Manufacturer No：IS61WV25616BLL-10TL
- Manufacturer：ISSI, Integrated Silicon Solution Inc
- Category：Memory
- Datasheet：IS61WV25616BLL-10TL
- SKU：2669120
- Description：e3 Surface Mount Tray SRAM - Asynchronous ic memory 100MHz 10ns 0.8mm 40mA
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User Guide
IS61WV25616BLL-10TL Details
e3 Surface Mount Tray SRAM - Asynchronous ic memory 100MHz 10ns 0.8mm 40mA
IS61WV25616BLL-10TL Specification Parameters
- Part Status: Active
- Mounting Type: Surface Mount
- Number of Ports: 1
- Radiation Hardening: No
- JESD-609 Code: e3
- Factory Lead Time: 8 Weeks
- Packaging: Tray
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Number of Terminations: 44
- Pin Count: 44
- Terminal Pitch: 0.8mm
- Max Frequency: 100MHz
- Output Characteristics: 3-STATE
- Terminal Finish: Matte Tin (Sn) - annealed
- Memory Format: SRAM
- Word Size: 16b
- Sync/Async: Asynchronous
- Power Supplies: 2.5/3.3V
- Address Bus Width: 18b
- Package / Case: 44-TSOP (0.400, 10.16mm Width)
- Memory Size: 4Mb 256K x 16
- RoHS Status: ROHS3 Compliant
- Number of Functions: 1
- Pbfree Code: yes
- Surface Mount: YES
- Terminal Position: DUAL
- Supply Voltage: 3.3V
- Memory Width: 16
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Supply Voltage-Max (Vsup): 3.6V
- Number of Pins: 44
- Standby Voltage-Min: 2V
- Memory Interface: Parallel
- Operating Temperature: 0°C~70°C TA
- Memory Type: Volatile
- Nominal Supply Current: 40mA
- Write Cycle Time - Word, Page: 10ns
- I/O Type: COMMON
- Supply Voltage-Min (Vsup): 2.4V
- Technology: SRAM - Asynchronous
- Density: 4 Mb
- Voltage - Supply: 2.4V~3.6V
- Standby Current-Max: 0.008A
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