FII40-06DIXYS
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    FII40-06D123
    • Manufacturer No：
      FII40-06D
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Arrays
    • Datasheet：
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    • SKU：
      3910146
    • Description：
      Trans IGBT Chip N-CH 600V 40A 5-Pin(5+Tab) ISOPLUS I4-PAC
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    FII40-06D
    • Manufacturer No：
      FII40-06D
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Arrays
    • Datasheet：
      FII40-06D
    • SKU：
      3910146
    • Description：
      Trans IGBT Chip N-CH 600V 40A 5-Pin(5+Tab) ISOPLUS I4-PAC

    User Guide

    User Guide

    FII40-06D Details

    Trans IGBT Chip N-CH 600V 40A 5-Pin(5+Tab) ISOPLUS I4-PAC

    FII40-06D Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Packaging: Bulk
    • Mount: Through Hole
    • NTC Thermistor: No
    • Number of Terminations: 5
    • Pin Count: 5
    • Element Configuration: Dual
    • Input: Standard
    • Collector Emitter Breakdown Voltage: 600V
    • Terminal Position: SINGLE
    • Operating Temperature: -55°C~150°C TJ
    • Case Connection: ISOLATED
    • Additional Feature: HIGH RELIABILITY
    • Max Collector Current: 40A
    • Polarity/Channel Type: N-CHANNEL
    • Turn On Time: 100 ns
    • Transistor Application: POWER CONTROL
    • Max Power Dissipation: 125W
    • Configuration: Half Bridge
    • Input Capacitance: 1.6nF
    • Turn Off Time-Nom (toff): 310 ns
    • Length: 19.91mm
    • Package / Case: i4-Pac?-5
    • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Mounting Type: Through Hole
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Number of Pins: 5
    • Published: 2011
    • Transistor Element Material: SILICON
    • Voltage - Rated DC: 600V
    • Collector Emitter Voltage (VCEO): 600V
    • Gate-Emitter Voltage-Max: 20V
    • JESD-609 Code: e1
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Current Rating: 40A
    • Factory Lead Time: 32 Weeks
    • Rise Time: 50 ns
    • Current - Collector Cutoff (Max): 600μA
    • Subcategory: Insulated Gate BIP Transistors
    • Width: 5.03mm
    • IGBT Type: NPT
    • Weight: 6.500007g
    • VCEsat-Max: 2.2 V
    • Height: 20.88mm
    • Input Capacitance (Cies) @ Vce: 1.6nF @ 25V
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