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- Manufacturer No：IXBD4410SI
- Manufacturer：IXYS
- Category：PMIC - Gate Drivers
- Datasheet：IXBD4410SI
- SKU：3912638
- Description：Tube IXBD4410 Low-Side 2001 gate driver 100ns -40C~150C TJ 2A 2A 600mW
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User Guide
IXBD4410SI Details
Tube IXBD4410 Low-Side 2001 gate driver 100ns -40C~150C TJ 2A 2A 600mW
IXBD4410SI Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Drivers: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Part Status: Obsolete
- Packaging: Tube
- Number of Terminations: 16
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Supply Voltage: 15V
- Output Current: 2A
- Published: 2001
- Input Type: Non-Inverting
- Height Seated (Max): 2.65mm
- Operating Temperature: -40°C~150°C TJ
- High Side Voltage - Max (Bootstrap): 1200V
- Driven Configuration: Low-Side
- Current - Peak Output (Source, Sink): 2A 2A
- Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER
- Rise / Fall Time (Typ): 15ns 15ns
- Logic Voltage - VIL, VIH: 1V 3.65V
- Base Part Number: IXBD4410
- Mounting Type: Surface Mount
- Number of Functions: 1
- RoHS Status: RoHS Compliant
- High Side Driver: YES
- Lead Free: Lead Free
- Terminal Position: DUAL
- Qualification Status: Not Qualified
- Pin Count: 16
- Peak Reflow Temperature (Cel): 260
- Channel Type: Single
- Operating Supply Voltage: 20V
- Output Peak Current Limit-Nom: 2A
- Width: 7.5mm
- Time@Peak Reflow Temperature-Max (s): 35
- Max Power Dissipation: 600mW
- Package / Case: 16-SOIC (0.295, 7.50mm Width)
- Fall Time (Typ): 150 ns
- Rise Time: 100ns
- Voltage - Supply: 10V~20V
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Weight: 550.009098mg
- Series: ISOSMART?
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