IXFH120N15PIXYS
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    IXFH120N15P123
    • Manufacturer No：
      IXFH120N15P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3909766
    • Description：
      MOSFET N-CH 150V 120A TO-247
    • Quantity：
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    • Qty Unit Price price
    • 1 $9.159 $9.159
    • 10 $9.068 $90.68
    • 100 $8.978 $897.8
    • 1000 $8.889 $8889
    • 10000 $8.8 $88000

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    IXFH120N15P
    • Manufacturer No：
      IXFH120N15P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFH120N15P
    • SKU：
      3909766
    • Description：
      MOSFET N-CH 150V 120A TO-247

    User Guide

    User Guide

    IXFH120N15P Details

    MOSFET N-CH 150V 120A TO-247

    IXFH120N15P Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Threshold Voltage: 5V
    • Number of Terminations: 3
    • Pin Count: 3
    • REACH SVHC: No SVHC
    • Drain to Source Breakdown Voltage: 150V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • JESD-609 Code: e1
    • FET Type: N-Channel
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Continuous Drain Current (ID): 120A
    • Fall Time (Typ): 26 ns
    • Turn On Delay Time: 33 ns
    • Rise Time: 42 ns
    • Pulsed Drain Current-Max (IDM): 260A
    • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
    • Vgs(th) (Max) @ Id: 5V @ 4mA
    • Power Dissipation-Max: 600W Tc
    • Series: PolarHT? HiPerFET?
    • Rds On (Max) @ Id, Vgs: 16m Ω @ 500mA, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Reach Compliance Code: unknown
    • Published: 2006
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Power Dissipation: 600W
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Width: 5.3mm
    • Package / Case: TO-247-3
    • Length: 16.26mm
    • JEDEC-95 Code: TO-247AD
    • Turn-Off Delay Time: 85 ns
    • Current - Continuous Drain (Id) @ 25°C: 120A Tc
    • Height: 21.46mm
    • Drain-source On Resistance-Max: 0.016Ohm
    • Avalanche Energy Rating (Eas): 2000 mJ
    • Additional Feature: AVALANCHE ENERGY RATED
    • Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
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