IXFH30N50IXYS
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    IXFH30N50123
    • Manufacturer No：
      IXFH30N50
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3910009
    • Description：
      MOSFET N-CH 500V 30A TO-247
    • Quantity：
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    Inventory:133
    • Qty Unit Price price
    • 1 $13.582 $13.582
    • 10 $13.447 $134.47
    • 100 $13.313 $1331.3
    • 1000 $13.181 $13181
    • 10000 $13.05 $130500

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    IXFH30N50
    • Manufacturer No：
      IXFH30N50
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFH30N50
    • SKU：
      3910009
    • Description：
      MOSFET N-CH 500V 30A TO-247

    User Guide

    User Guide

    IXFH30N50 Details

    MOSFET N-CH 500V 30A TO-247

    IXFH30N50 Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Pin Count: 3
    • REACH SVHC: No SVHC
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 500V
    • Gate to Source Voltage (Vgs): 20V
    • Published: 2000
    • Technology: MOSFET (Metal Oxide)
    • Threshold Voltage: 4V
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Package / Case: TO-247-3
    • Additional Feature: AVALANCHE RATED
    • Resistance: 160mOhm
    • Fall Time (Typ): 26 ns
    • Nominal Vgs: 4 V
    • Current - Continuous Drain (Id) @ 25°C: 30A Tc
    • Avalanche Energy Rating (Eas): 1500 mJ
    • Power Dissipation-Max: 360W Tc
    • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
    • Rds On (Max) @ Id, Vgs: 160m Ω @ 15A, 10V
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • RoHS Status: RoHS Compliant
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Dual Supply Voltage: 500V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Continuous Drain Current (ID): 30A
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Subcategory: FET General Purpose Power
    • Pulsed Drain Current-Max (IDM): 120A
    • Reverse Recovery Time: 250 ns
    • Turn-Off Delay Time: 110 ns
    • Weight: 6g
    • Series: HiPerFET?
    • Power Dissipation: 360W
    • Rise Time: 42ns
    • Vgs(th) (Max) @ Id: 4V @ 4mA
    • Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
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