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- Manufacturer No：IXFH30N50P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFH30N50P
- SKU：3910519
- Description：MOSFET N-CH 500V 30A TO-247AD
User Guide
User Guide
IXFH30N50P Details
MOSFET N-CH 500V 30A TO-247AD
IXFH30N50P Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Threshold Voltage: 5V
- Number of Terminations: 3
- Pin Count: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 500V
- Factory Lead Time: 24 Weeks
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Continuous Drain Current (ID): 30A
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±30V
- Resistance: 200mOhm
- Additional Feature: AVALANCHE RATED
- Rise Time: 24 ns
- Current - Continuous Drain (Id) @ 25°C: 30A Tc
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Turn-Off Delay Time: 82 ns
- Power Dissipation-Max: 460W Tc
- Rds On (Max) @ Id, Vgs: 200m Ω @ 15A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Transistor Element Material: SILICON
- Voltage - Rated DC: 500V
- Gate to Source Voltage (Vgs): 30V
- Published: 2004
- FET Type: N-Channel
- Current Rating: 30A
- Transistor Application: SWITCHING
- Case Connection: DRAIN
- Package / Case: TO-247-3
- Pulsed Drain Current-Max (IDM): 75A
- Fall Time (Typ): 24 ns
- JEDEC-95 Code: TO-247AD
- Power Dissipation: 460W
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Series: HiPerFET?, PolarHT?
- Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
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