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- Manufacturer No：IXFP8N50PM
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFP8N50PM
- SKU：3895910
- Description：MOSFET N-CH 500V 4.4A TO-220
User Guide
User Guide
IXFP8N50PM Details
MOSFET N-CH 500V 4.4A TO-220
IXFP8N50PM Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Published: 2006
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 500V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Width: 4.83mm
- Operating Mode: ENHANCEMENT MODE
- JEDEC-95 Code: TO-220AB
- Pulsed Drain Current-Max (IDM): 14A
- Turn On Delay Time: 22 ns
- Fall Time (Typ): 23 ns
- Drain-source On Resistance-Max: 0.8Ohm
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Length: 10.66mm
- Power Dissipation-Max: 42W Tc
- Current - Continuous Drain (Id) @ 25°C: 4.4A Tc
- Vgs(th) (Max) @ Id: 5.5V @ 1mA
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- Case Connection: ISOLATED
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Package / Case: TO-220-3
- Vgs (Max): ±30V
- Additional Feature: AVALANCHE RATED
- Continuous Drain Current (ID): 4.4A
- Turn-Off Delay Time: 65 ns
- Power Dissipation: 42W
- Height: 9.15mm
- Rise Time: 28ns
- Series: HiPerFET?, PolarHT?
- Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
- Rds On (Max) @ Id, Vgs: 800m Ω @ 4A, 10V
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