IXFT12N100FIXYS
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    IXFT12N100F123
    • Manufacturer No：
      IXFT12N100F
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      2876968
    • Description：
      MOSFET N-CH 1000V 12A TO268
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    IXFT12N100F
    • Manufacturer No：
      IXFT12N100F
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFT12N100F
    • SKU：
      2876968
    • Description：
      MOSFET N-CH 1000V 12A TO268

    User Guide

    User Guide

    IXFT12N100F Details

    MOSFET N-CH 1000V 12A TO268

    IXFT12N100F Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • RoHS Status: RoHS Compliant
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Pin Count: 4
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Termination: SMD/SMT
    • Published: 2009
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Drain to Source Breakdown Voltage: 1kV
    • FET Type: N-Channel
    • Continuous Drain Current (ID): 12A
    • Operating Mode: ENHANCEMENT MODE
    • Drain to Source Voltage (Vdss): 1000V
    • Power Dissipation: 300W
    • Fall Time (Typ): 12 ns
    • Pulsed Drain Current-Max (IDM): 48A
    • Turn-Off Delay Time: 31 ns
    • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
    • Avalanche Energy Rating (Eas): 1000 mJ
    • Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
    • Vgs(th) (Max) @ Id: 5.5V @ 4mA
    • Rds On (Max) @ Id, Vgs: 1.05 Ω @ 6A, 10V
    • Number of Terminations: 2
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Surface Mount: YES
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Factory Lead Time: 10 Weeks
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Operating Temperature: -55°C~150°C TJ
    • Dual Supply Voltage: 1kV
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • JESD-30 Code: R-PSSO-G2
    • Case Connection: DRAIN
    • Additional Feature: AVALANCHE RATED
    • Power Dissipation-Max: 300W Tc
    • Current - Continuous Drain (Id) @ 25°C: 12A Tc
    • Rise Time: 9.8 ns
    • Nominal Vgs: 5.5 V
    • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
    • Series: HiPerRF?
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