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- Manufacturer No：IXFT26N50
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFT26N50
- SKU：3909772
- Description：Trans MOSFET N-CH 500V 26A 3-Pin(2+Tab) TO-268
User Guide
User Guide
IXFT26N50 Details
Trans MOSFET N-CH 500V 26A 3-Pin(2+Tab) TO-268
IXFT26N50 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- Terminal Form: GULL WING
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Case Connection: DRAIN
- Fall Time (Typ): 30 ns
- Turn-Off Delay Time: 65 ns
- Power Dissipation-Max: 300W Tc
- Series: HiPerFET?
- Pulsed Drain Current-Max (IDM): 104A
- Current - Continuous Drain (Id) @ 25°C: 26A Tc
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Rds On (Max) @ Id, Vgs: 200m Ω @ 13A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Pin Count: 4
- Qualification Status: Not Qualified
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 500V
- Published: 2002
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Power Dissipation: 300W
- Subcategory: FET General Purpose Power
- Additional Feature: AVALANCHE RATED
- Continuous Drain Current (ID): 26A
- Drain-source On Resistance-Max: 0.2Ohm
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Rise Time: 33ns
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
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