IXFV15N100PSIXYS
    Add to like
    Add to project list
    IXFV15N100PS123
    • Manufacturer No：
      IXFV15N100PS
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3910282
    • Description：
      Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) PLUS 220
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    IXFV15N100PS
    • Manufacturer No：
      IXFV15N100PS
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFV15N100PS
    • SKU：
      3910282
    • Description：
      Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) PLUS 220

    User Guide

    User Guide

    IXFV15N100PS Details

    Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) PLUS 220

    IXFV15N100PS Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Pin Count: 3
    • Terminal Form: GULL WING
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Continuous Drain Current (ID): 15A
    • Drain to Source Breakdown Voltage: 1kV
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Pulsed Drain Current-Max (IDM): 40A
    • Case Connection: DRAIN
    • Vgs (Max): ±30V
    • Turn-Off Delay Time: 44 ns
    • Fall Time (Typ): 58 ns
    • Series: HiPerFET?, PolarP2?
    • Rise Time: 44ns
    • Package / Case: PLUS-220SMD
    • Power Dissipation-Max: 543W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 5140pF @ 25V
    • Number of Terminations: 2
    • Mount: Surface Mount
    • RoHS Status: RoHS Compliant
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Published: 2008
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 30V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Drain to Source Voltage (Vdss): 1000V
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Additional Feature: AVALANCHE RATED
    • Current - Continuous Drain (Id) @ 25°C: 15A Tc
    • Avalanche Energy Rating (Eas): 500 mJ
    • Vgs(th) (Max) @ Id: 6.5V @ 1mA
    • Power Dissipation: 543W
    • Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
    • Drain-source On Resistance-Max: 0.76Ohm
    • Rds On (Max) @ Id, Vgs: 760m Ω @ 500mA, 10V
    Search for similar products

    IXFV15N100PS Similar Products

    The four parts on the right have similar specifications to IXYS & IXFV15N100PS

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via