IXFX55N50IXYS
    Add to like
    Add to project list
    IXFX55N50123
    • Manufacturer No：
      IXFX55N50
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3910589
    • Description：
      MOSFET N-CH 500V 55A PLUS247
    • Quantity：
        • RFQ
        • Add To Cart
    • Material flow:
    • Payment:
    Inventory:0
    • Qty Unit Price price

    Not the price you want? Send RFQ Now and we'll contact you ASAP

    IXFX55N50
    • Manufacturer No：
      IXFX55N50
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFX55N50
    • SKU：
      3910589
    • Description：
      MOSFET N-CH 500V 55A PLUS247

    User Guide

    User Guide

    IXFX55N50 Details

    MOSFET N-CH 500V 55A PLUS247

    IXFX55N50 Specification Parameters

    • Mounting Type: Through Hole
    • Number of Elements: 1
    • RoHS Status: RoHS Compliant
    • Lead Free: Lead Free
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Factory Lead Time: 8 Weeks
    • Number of Terminations: 3
    • Pin Count: 3
    • Max Junction Temperature (Tj): 150°C
    • Transistor Element Material: SILICON
    • Voltage - Rated DC: 500V
    • Gate to Source Voltage (Vgs): 20V
    • Threshold Voltage: 4.5V
    • JESD-609 Code: e1
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Subcategory: FET General Purpose Power
    • Rise Time: 60 ns
    • Fall Time (Typ): 45 ns
    • Resistance: 80mOhm
    • Current Rating: 55A
    • Power Dissipation: 520W
    • Series: HiPerFET?
    • Vgs(th) (Max) @ Id: 4.5V @ 8mA
    • Power Dissipation-Max: 625W Tc
    • Height: 25.66mm
    • Mount: Through Hole
    • Number of Channels: 1
    • Pbfree Code: yes
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 500V
    • Published: 2002
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Package / Case: TO-247-3
    • Turn On Delay Time: 45 ns
    • Additional Feature: AVALANCHE RATED
    • Turn-Off Delay Time: 120 ns
    • Continuous Drain Current (ID): 55A
    • Pulsed Drain Current-Max (IDM): 220A
    • Current - Continuous Drain (Id) @ 25°C: 55A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
    • Rds On (Max) @ Id, Vgs: 80m Ω @ 500mA, 10V
    Search for similar products

    IXFX55N50 Similar Products

    The four parts on the right have similar specifications to IXYS & IXFX55N50

    Hot Search

    Excellent

    Based on reviews

    Excellent

    Based on reviews

    LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.

    About Us

    Support

    Quick Links

    Contact Us

    Our social media
    We support logistics
    We Accept Payment Via