IXGA7N60CIXYS
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    IXGA7N60C123
    • Manufacturer No：
      IXGA7N60C
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
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    • SKU：
      3910958
    • Description：
      Trans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) TO-263AA
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    IXGA7N60C
    • Manufacturer No：
      IXGA7N60C
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
      IXGA7N60C
    • SKU：
      3910958
    • Description：
      Trans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) TO-263AA

    User Guide

    User Guide

    IXGA7N60C Details

    Trans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) TO-263AA

    IXGA7N60C Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • RoHS Status: RoHS Compliant
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Pin Count: 3
    • Gate-Emitter Thr Voltage-Max: 5.5V
    • Element Configuration: Single
    • Collector Emitter Breakdown Voltage: 600V
    • Gate-Emitter Voltage-Max: 20V
    • Published: 2003
    • Current - Collector Pulsed (Icm): 30A
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Polarity/Channel Type: N-CHANNEL
    • Case Connection: COLLECTOR
    • Transistor Application: POWER CONTROL
    • IGBT Type: PT
    • Power - Max: 54W
    • Turn Off Time-Nom (toff): 205 ns
    • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
    • Base Part Number: IXG*7N60
    • Switching Energy: 70μJ (on), 120μJ (off)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Transistor Element Material: SILICON
    • Input Type: Standard
    • Collector Emitter Voltage (VCEO): 600V
    • Collector Emitter Saturation Voltage: 2.7V
    • Operating Temperature: -55°C~150°C TJ
    • Terminal Form: THROUGH-HOLE
    • JEDEC-95 Code: TO-220AB
    • Turn On Time: 25 ns
    • Max Collector Current: 14A
    • Subcategory: Insulated Gate BIP Transistors
    • Max Power Dissipation: 54W
    • Weight: 1.59999g
    • Gate Charge: 25nC
    • Series: HiPerFAST?, Lightspeed?
    • Test Condition: 480V, 7A, 22 Ω, 15V
    • Td (on/off) @ 25°C: 9ns/65ns
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