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- Manufacturer No：IXGH6N170
- Manufacturer：IXYS
- Category：Transistors - IGBTs - Single
- Datasheet：IXGH6N170
- SKU：3896461
- Description：IGBT 1700V 12A 75W TO247
User Guide
User Guide
IXGH6N170 Details
IGBT 1700V 12A 75W TO247
IXGH6N170 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Gate-Emitter Thr Voltage-Max: 5V
- Number of Terminations: 3
- Pin Count: 3
- Collector Emitter Saturation Voltage: 3V
- Transistor Element Material: SILICON
- Input Type: Standard
- Max Power Dissipation: 75W
- Operating Temperature: -55°C~150°C TJ
- Width: 5.3mm
- Polarity/Channel Type: N-CHANNEL
- Package / Case: TO-247-3
- Subcategory: Insulated Gate BIP Transistors
- Turn Off Time-Nom (toff): 600 ns
- IGBT Type: NPT
- Transistor Application: MOTOR CONTROL
- Collector Emitter Breakdown Voltage: 1.7kV
- Weight: 6.500007g
- Switching Energy: 1.5mJ (off)
- Base Part Number: IXG*6N170
- Td (on/off) @ 25°C: 40ns/250ns
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Published: 2006
- Element Configuration: Single
- Gate-Emitter Voltage-Max: 20V
- Power Dissipation: 75W
- Max Collector Current: 12A
- Factory Lead Time: 28 Weeks
- Current - Collector Pulsed (Icm): 24A
- Case Connection: COLLECTOR
- Length: 16.26mm
- JEDEC-95 Code: TO-247AD
- Turn On Time: 85 ns
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Collector Emitter Voltage (VCEO): 1.7kV
- Height: 21.46mm
- Gate Charge: 20nC
- Test Condition: 1360V, 6A, 33 Ω, 15V
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 6A
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