IXGP42N30C3IXYS
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    IXGP42N30C3123
    • Manufacturer No：
      IXGP42N30C3
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
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    • SKU：
      3910242
    • Description：
      IGBT 300V 223W TO220AB
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    IXGP42N30C3
    • Manufacturer No：
      IXGP42N30C3
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
      IXGP42N30C3
    • SKU：
      3910242
    • Description：
      IGBT 300V 223W TO220AB

    User Guide

    User Guide

    IXGP42N30C3 Details

    IGBT 300V 223W TO220AB

    IXGP42N30C3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Pin Count: 3
    • Terminal Finish: Matte Tin (Sn)
    • Published: 2008
    • Configuration: Single
    • Terminal Position: SINGLE
    • Factory Lead Time: 24 Weeks
    • Package / Case: TO-220-3
    • Polarity/Channel Type: N-CHANNEL
    • Case Connection: COLLECTOR
    • Current - Collector Pulsed (Icm): 250A
    • Max Collector Current: 42A
    • Collector Emitter Voltage (VCEO): 1.85V
    • Turn On Time: 43 ns
    • Max Power Dissipation: 223W
    • Turn Off Time-Nom (toff): 229 ns
    • Switching Energy: 120μJ (on), 150μJ (off)
    • Td (on/off) @ 25°C: 21ns/113ns
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Gate-Emitter Thr Voltage-Max: 5V
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Collector Emitter Breakdown Voltage: 300V
    • Transistor Element Material: SILICON
    • Input Type: Standard
    • Gate-Emitter Voltage-Max: 20V
    • Operating Temperature: -55°C~150°C TJ
    • JEDEC-95 Code: TO-220AB
    • JESD-30 Code: R-PSFM-T3
    • Fall Time-Max (tf): 120ns
    • Transistor Application: POWER CONTROL
    • Subcategory: Insulated Gate BIP Transistors
    • IGBT Type: PT
    • Series: GenX3?
    • Gate Charge: 76nC
    • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
    • Test Condition: 200V, 21A, 10 Ω, 15V
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