IXGT16N170IXYS
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    IXGT16N170123
    • Manufacturer No：
      IXGT16N170
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
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    • SKU：
      3916029
    • Description：
      Trans IGBT Chip N-CH 1.7KV 32A 3-Pin(2+Tab) TO-268
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    IXGT16N170
    • Manufacturer No：
      IXGT16N170
    • Manufacturer：
      IXYS
    • Category：
      Transistors - IGBTs - Single
    • Datasheet：
      IXGT16N170
    • SKU：
      3916029
    • Description：
      Trans IGBT Chip N-CH 1.7KV 32A 3-Pin(2+Tab) TO-268

    User Guide

    User Guide

    IXGT16N170 Details

    Trans IGBT Chip N-CH 1.7KV 32A 3-Pin(2+Tab) TO-268

    IXGT16N170 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Gate-Emitter Thr Voltage-Max: 5V
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Reach Compliance Code: not_compliant
    • Transistor Element Material: SILICON
    • Input Type: Standard
    • Factory Lead Time: 24 Weeks
    • Operating Temperature: -55°C~150°C TJ
    • Polarity/Channel Type: N-CHANNEL
    • JESD-30 Code: R-PSFM-T3
    • Max Collector Current: 32A
    • Subcategory: Insulated Gate BIP Transistors
    • JEDEC-95 Code: TO-247AD
    • Voltage - Collector Emitter Breakdown (Max): 1700V
    • Collector Emitter Voltage (VCEO): 1.7kV
    • Power Dissipation: 190W
    • Weight: 4.500005g
    • Turn Off Time-Nom (toff): 1600 ns
    • Base Part Number: IXG*16N170
    • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 16A
    • Switching Energy: 9.3mJ (off)
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • JESD-609 Code: e3
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Pin Count: 3
    • Terminal Finish: Matte Tin (Sn)
    • Published: 2006
    • Element Configuration: Single
    • Gate-Emitter Voltage-Max: 20V
    • Collector Emitter Saturation Voltage: 2.7V
    • Terminal Form: THROUGH-HOLE
    • Current - Collector Pulsed (Icm): 80A
    • Case Connection: COLLECTOR
    • Transistor Application: POWER CONTROL
    • Turn On Time: 90 ns
    • IGBT Type: NPT
    • Collector Emitter Breakdown Voltage: 1.7kV
    • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
    • Max Power Dissipation: 190W
    • Fall Time-Max (tf): 1100 ns
    • Gate Charge: 78nC
    • Test Condition: 1360V, 16A, 10 Ω, 15V
    • Td (on/off) @ 25°C: 45ns/400ns
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