IXTA200N055T2IXYS
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    IXTA200N055T2123
    • Manufacturer No：
      IXTA200N055T2
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3896313
    • Description：
      MOSFET N-CH 55V 200A TO-263
    • Quantity：
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    Inventory:331
    • Qty Unit Price price
    • 1 $3.455 $3.455
    • 10 $3.42 $34.2
    • 100 $3.386 $338.6
    • 1000 $3.352 $3352
    • 10000 $3.318 $33180

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    IXTA200N055T2
    • Manufacturer No：
      IXTA200N055T2
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXTA200N055T2
    • SKU：
      3896313
    • Description：
      MOSFET N-CH 55V 200A TO-263

    User Guide

    User Guide

    IXTA200N055T2 Details

    MOSFET N-CH 55V 200A TO-263

    IXTA200N055T2 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Terminal Form: GULL WING
    • Reach Compliance Code: not_compliant
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Drain to Source Breakdown Voltage: 55V
    • JESD-30 Code: R-PSSO-G2
    • Subcategory: FET General Purpose Power
    • Continuous Drain Current (ID): 200A
    • Additional Feature: AVALANCHE RATED
    • Fall Time (Typ): 27 ns
    • Rise Time: 22ns
    • Power Dissipation-Max: 360W Tc
    • Drain-source On Resistance-Max: 0.0042Ohm
    • Series: TrenchT2?
    • Rds On (Max) @ Id, Vgs: 4.2m Ω @ 50A, 10V
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Pin Count: 4
    • Qualification Status: Not Qualified
    • Terminal Finish: Matte Tin (Sn)
    • Published: 2008
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Factory Lead Time: 28 Weeks
    • Case Connection: DRAIN
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Pulsed Drain Current-Max (IDM): 500A
    • Power Dissipation: 360W
    • Turn-Off Delay Time: 49 ns
    • Avalanche Energy Rating (Eas): 600 mJ
    • Current - Continuous Drain (Id) @ 25°C: 200A Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
    • Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
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