IXTA3N50PIXYS
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    IXTA3N50P123
    • Manufacturer No：
      IXTA3N50P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3896800
    • Description：
      MOSFET N-CH 500V 3.6A D2PAK
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    IXTA3N50P
    • Manufacturer No：
      IXTA3N50P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXTA3N50P
    • SKU：
      3896800
    • Description：
      MOSFET N-CH 500V 3.6A D2PAK

    User Guide

    User Guide

    IXTA3N50P Details

    MOSFET N-CH 500V 3.6A D2PAK

    IXTA3N50P Specification Parameters

    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Pin Count: 4
    • Packaging: Tube
    • Current Rating: 3A
    • Terminal Form: GULL WING
    • Published: 2006
    • Transistor Element Material: SILICON
    • Voltage - Rated DC: 500V
    • Gate to Source Voltage (Vgs): 30V
    • Pulsed Drain Current-Max (IDM): 8A
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Case Connection: DRAIN
    • Drain-source On Resistance-Max: 2Ohm
    • Vgs (Max): ±30V
    • Additional Feature: AVALANCHE RATED
    • Power Dissipation: 70W
    • Power Dissipation-Max: 70W Tc
    • Current - Continuous Drain (Id) @ 25°C: 3.6A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V
    • Number of Terminations: 2
    • Mount: Surface Mount
    • RoHS Status: RoHS Compliant
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Factory Lead Time: 8 Weeks
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Terminal Finish: Matte Tin (Sn)
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 500V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • JESD-30 Code: R-PSSO-G2
    • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
    • Rise Time: 15 ns
    • Fall Time (Typ): 12 ns
    • Continuous Drain Current (ID): 3.6A
    • Turn-Off Delay Time: 38 ns
    • Series: PolarHV?
    • Avalanche Energy Rating (Eas): 180 mJ
    • Vgs(th) (Max) @ Id: 5.5V @ 50μA
    • Rds On (Max) @ Id, Vgs: 2 Ω @ 1.8A, 10V
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