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- Manufacturer No：IXTH30N60P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTH30N60P
- SKU：3896193
- Description：MOSFET N-CH 600V 30A TO-247
User Guide
User Guide
IXTH30N60P Details
MOSFET N-CH 600V 30A TO-247
IXTH30N60P Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Current Rating: 30A
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Fall Time (Typ): 25 ns
- Vgs (Max): ±30V
- Additional Feature: AVALANCHE RATED
- Turn-Off Delay Time: 80 ns
- Power Dissipation: 540W
- Avalanche Energy Rating (Eas): 1500 mJ
- Series: PolarHV?
- Power Dissipation-Max: 540W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Published: 2006
- Transistor Element Material: SILICON
- Voltage - Rated DC: 600V
- Gate to Source Voltage (Vgs): 30V
- JESD-609 Code: e1
- Technology: MOSFET (Metal Oxide)
- Continuous Drain Current (ID): 30A
- Transistor Application: SWITCHING
- Factory Lead Time: 28 Weeks
- Pulsed Drain Current-Max (IDM): 80A
- Rise Time: 20 ns
- Package / Case: TO-247-3
- Vgs(th) (Max) @ Id: 5V @ 250μA
- JEDEC-95 Code: TO-247AD
- Current - Continuous Drain (Id) @ 25°C: 30A Tc
- Drain-source On Resistance-Max: 0.24Ohm
- Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
- Rds On (Max) @ Id, Vgs: 240m Ω @ 15A, 10V
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