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- Manufacturer No：IXTH67N10
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTH67N10
- SKU：3912448
- Description：MOSFET N-CH 100V 67A TO247AD
User Guide
User Guide
IXTH67N10 Details
MOSFET N-CH 100V 67A TO247AD
IXTH67N10 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- Voltage - Rated DC: 100V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Part Status: Not For New Designs
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Power Dissipation: 300W
- Subcategory: FET General Purpose Power
- Resistance: 25mOhm
- Turn-Off Delay Time: 100 ns
- JEDEC-95 Code: TO-247AD
- Continuous Drain Current (ID): 67A
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Pulsed Drain Current-Max (IDM): 268A
- Rds On (Max) @ Id, Vgs: 25m Ω @ 33.5A, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Moisture Sensitivity Level (MSL): Not Applicable
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Drain to Source Breakdown Voltage: 100V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Published: 2003
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Fall Time (Typ): 30 ns
- Package / Case: TO-247-3
- Rise Time: 60ns
- Power Dissipation-Max: 300W Tc
- Current Rating: 67A
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 67A Tc
- Series: MegaMOS?
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