IXTK180N15PIXYS
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    IXTK180N15P123
    • Manufacturer No：
      IXTK180N15P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3896180
    • Description：
      Single N-Channel 100 V 10 mOhm 800 W Power MOSFET - TO-264AA
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    IXTK180N15P
    • Manufacturer No：
      IXTK180N15P
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXTK180N15P
    • SKU：
      3896180
    • Description：
      Single N-Channel 100 V 10 mOhm 800 W Power MOSFET - TO-264AA

    User Guide

    User Guide

    IXTK180N15P Details

    Single N-Channel 100 V 10 mOhm 800 W Power MOSFET - TO-264AA

    IXTK180N15P Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • Lead Free: Lead Free
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Drain to Source Breakdown Voltage: 100V
    • Drain to Source Voltage (Vdss): 150V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Resistance: 10mOhm
    • FET Type: N-Channel
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Turn-Off Delay Time: 150 ns
    • Additional Feature: AVALANCHE RATED
    • Rise Time: 32 ns
    • Package / Case: TO-264-3, TO-264AA
    • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
    • Vgs(th) (Max) @ Id: 5V @ 500μA
    • Rds On (Max) @ Id, Vgs: 10m Ω @ 90A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Threshold Voltage: 5V
    • Number of Terminations: 3
    • Pin Count: 3
    • REACH SVHC: No SVHC
    • Reach Compliance Code: unknown
    • Published: 2006
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • JESD-609 Code: e1
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Factory Lead Time: 28 Weeks
    • Subcategory: FET General Purpose Power
    • Power Dissipation: 800W
    • Continuous Drain Current (ID): 180A
    • Fall Time (Typ): 36 ns
    • Current - Continuous Drain (Id) @ 25°C: 180A Tc
    • Series: PolarHT?
    • Avalanche Energy Rating (Eas): 4000 mJ
    • Power Dissipation-Max: 800W Tc
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