IXTP120P065T
IXYS
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleNumber of Elements
1ECCN Code
EAR99Pbfree Code
yesLead Free
Lead FreeTime@Peak Reflow Temperature-Max (s)
NOT SPECIFIEDPeak Reflow Temperature (Cel)
NOT SPECIFIEDPackaging
TubeNumber of Terminations
3Number of Pins
3Pin Count
3Published
2013Qualification Status
Not QualifiedDrive Voltage (Max Rds On,Min Rds On)
10VTransistor Element Material
SILICONElement Configuration
SingleGate to Source Voltage (Vgs)
15VFactory Lead Time
24 WeeksOperating Temperature
-55°C~150°C TJJESD-609 Code
e1Technology
MOSFET (Metal Oxide)Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)Transistor Application
SWITCHINGOperating Mode
ENHANCEMENT MODEPackage / Case
TO-220-3Subcategory
Other TransistorsCase Connection
DRAINJEDEC-95 Code
TO-220ABFET Type
P-ChannelVgs(th) (Max) @ Id
4V @ 250μADrain to Source Voltage (Vdss)
65VContinuous Drain Current (ID)
120AAdditional Feature
AVALANCHE RATEDRise Time
28 nsVgs (Max)
±15VFall Time (Typ)
21 nsTurn-Off Delay Time
38 nsDrain Current-Max (Abs) (ID)
0.12ACurrent - Continuous Drain (Id) @ 25°C
120A TcDrain-source On Resistance-Max
0.01OhmAvalanche Energy Rating (Eas)
1000 mJSeries
TrenchP?Power Dissipation
298WDrain to Source Breakdown Voltage
-65VGate Charge (Qg) (Max) @ Vgs
185nC @ 10VPower Dissipation-Max
298W TcRds On (Max) @ Id, Vgs
10m Ω @ 500mA, 10VInput Capacitance (Ciss) (Max) @ Vds
13200pF @ 25V