IXTP220N04T2IXYS
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    IXTP220N04T2123
    • Manufacturer No：
      IXTP220N04T2
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      3916400
    • Description：
      MOSFET N-CH 40V 220A TO-220
    • Quantity：
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    Inventory:2
    • Qty Unit Price price
    • 1 $4.195 $4.195
    • 10 $4.153 $41.53
    • 100 $4.111 $411.1
    • 1000 $4.07 $4070
    • 10000 $4.029 $40290

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    IXTP220N04T2
    • Manufacturer No：
      IXTP220N04T2
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXTP220N04T2
    • SKU：
      3916400
    • Description：
      MOSFET N-CH 40V 220A TO-220

    User Guide

    User Guide

    IXTP220N04T2 Details

    MOSFET N-CH 40V 220A TO-220

    IXTP220N04T2 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Pin Count: 3
    • Terminal Finish: Matte Tin (Sn)
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Factory Lead Time: 24 Weeks
    • Voltage: 40V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • JEDEC-95 Code: TO-220AB
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Additional Feature: AVALANCHE RATED
    • Rise Time: 21 ns
    • Turn-Off Delay Time: 31 ns
    • Power Dissipation-Max: 360W Tc
    • Drain-source On Resistance-Max: 0.0035Ohm
    • Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
    • Rds On (Max) @ Id, Vgs: 3.5m Ω @ 50A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Published: 2008
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Drain to Source Breakdown Voltage: 40V
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-220-3
    • Subcategory: FET General Purpose Power
    • JESD-30 Code: R-PSFM-T3
    • Current: 75A
    • Fall Time (Typ): 21 ns
    • Continuous Drain Current (ID): 220A
    • Power Dissipation: 360W
    • Avalanche Energy Rating (Eas): 600 mJ
    • Series: TrenchT2?
    • Current - Continuous Drain (Id) @ 25°C: 220A Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 6820pF @ 25V
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