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- Manufacturer No：IXTQ450P2
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTQ450P2
- SKU：3912635
- Description：MOSFET PolarP2 Power MOSFET
User Guide
User Guide
IXTQ450P2 Details
MOSFET PolarP2 Power MOSFET
IXTQ450P2 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Pin Count: 3
- Reach Compliance Code: unknown
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Power Dissipation: 300W
- Subcategory: FET General Purpose Power
- JESD-30 Code: R-PSFM-T3
- Additional Feature: AVALANCHE RATED
- Power Dissipation-Max: 300W Tc
- Terminal Finish: PURE TIN
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Avalanche Energy Rating (Eas): 750 mJ
- Series: PolarP2?
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Published: 2011
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 500V
- Factory Lead Time: 24 Weeks
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 16A
- Case Connection: DRAIN
- Pulsed Drain Current-Max (IDM): 35A
- Vgs (Max): ±30V
- Package / Case: TO-3P-3, SC-65-3
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 16A Tc
- Drain-source On Resistance-Max: 0.33Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V
- Rds On (Max) @ Id, Vgs: 330m Ω @ 8A, 10V
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