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- Manufacturer No：IXTQ86N20T
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTQ86N20T
- SKU：3912289
- Description：MOSFET N-CH 200V 86A TO-3P
User Guide
User Guide
IXTQ86N20T Details
MOSFET N-CH 200V 86A TO-3P
IXTQ86N20T Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Drain to Source Voltage (Vdss): 200V
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Factory Lead Time: 26 Weeks
- Case Connection: DRAIN
- Additional Feature: AVALANCHE RATED
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Continuous Drain Current (ID): 86A
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 86A Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- DS Breakdown Voltage-Min: 200V
- Published: 2006
- Transistor Element Material: SILICON
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Vgs (Max): ±30V
- Package / Case: TO-3P-3, SC-65-3
- Pulsed Drain Current-Max (IDM): 260A
- Avalanche Energy Rating (Eas): 1000 mJ
- Drain-source On Resistance-Max: 0.029Ohm
- Power Dissipation-Max: 480W Tc
- Rds On (Max) @ Id, Vgs: 29m Ω @ 500mA, 10V
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