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- Manufacturer No：IXTT16P60P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXTT16P60P
- SKU：3911940
- Description：MOSFET P-CH 600V 16A TO-268
User Guide
User Guide
IXTT16P60P Details
MOSFET P-CH 600V 16A TO-268
IXTT16P60P Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Pbfree Code: yes
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Reach Compliance Code: not_compliant
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 600V
- Terminal Position: SINGLE
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 16A
- Terminal Form: THROUGH-HOLE
- Configuration: SINGLE WITH BUILT-IN DIODE
- JESD-30 Code: R-PSFM-T3
- Additional Feature: AVALANCHE RATED
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Avalanche Energy Rating (Eas): 2500 mJ
- Power Dissipation-Max: 460W Tc
- Drain-source On Resistance-Max: 0.72Ohm
- Rds On (Max) @ Id, Vgs: 720m Ω @ 500mA, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Pin Count: 3
- Terminal Finish: Matte Tin (Sn)
- Published: 2008
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 600V
- Factory Lead Time: 24 Weeks
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Subcategory: Other Transistors
- Case Connection: DRAIN
- FET Type: P-Channel
- Pulsed Drain Current-Max (IDM): 48A
- JEDEC-95 Code: TO-247
- Current - Continuous Drain (Id) @ 25°C: 16A Tc
- Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
- Series: PolarP?
- Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 25V
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