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AUIRF2804L123
Inventory:990
  • Qty Unit Price price
  • 1 $11.124 $11.124
  • 10 $11.013 $110.13
  • 100 $10.903 $1090.3
  • 1000 $10.795 $10795
  • 10000 $10.688 $106880

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AUIRF2804L
  • Manufacturer No:
    AUIRF2804L
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    AUIRF2804L
  • SKU:
    2639923
  • Description:
    N-Channel 40 V 195A (Tc) 300W (Tc) Through Hole TO-262

AUIRF2804L Details

N-Channel 40 V 195A (Tc) 300W (Tc) Through Hole TO-262

AUIRF2804L Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Terminations: 3
  • REACH SVHC: No SVHC
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Breakdown Voltage: 40V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Power Dissipation: 300W
  • Subcategory: FET General Purpose Power
  • Series: HEXFET?
  • Turn On Delay Time: 13 ns
  • Rise Time: 120 ns
  • Turn-Off Delay Time: 130 ns
  • Power Dissipation-Max: 300W Tc
  • Continuous Drain Current (ID): 195A
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Width: 4.6228mm
  • Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Packaging: Tube
  • Number of Pins: 3
  • Factory Lead Time: 16 Weeks
  • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Threshold Voltage: 2V
  • Published: 2003
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Vgs (Max): ±20V
  • Case Connection: DRAIN
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Height: 9.65mm
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Length: 10.668mm
  • Fall Time (Typ): 130 ns
  • Drain Current-Max (Abs) (ID): 270A
  • Drain-source On Resistance-Max: 0.002Ohm
  • Current - Continuous Drain (Id) @ 25°C: 195A Tc
  • Avalanche Energy Rating (Eas): 540 mJ
  • Rds On (Max) @ Id, Vgs: 2m Ω @ 75A, 10V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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