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- Manufacturer No：AUIRF3710Z
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：AUIRF3710Z
- SKU：2637276
- Description：N-Channel 100 V 59A (Tc) 160W (Tc) Through Hole TO-220AB
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User Guide
AUIRF3710Z Details
N-Channel 100 V 59A (Tc) 160W (Tc) Through Hole TO-220AB
AUIRF3710Z Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Radiation Hardening: No
- Packaging: Tube
- Number of Pins: 3
- Drain to Source Breakdown Voltage: 100V
- Published: 2010
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Series: HEXFET?
- Nominal Vgs: 2 V
- Pulsed Drain Current-Max (IDM): 240A
- Height: 9.017mm
- Fall Time (Typ): 56 ns
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Power Dissipation-Max: 160W Tc
- Current - Continuous Drain (Id) @ 25°C: 59A Tc
- Rise Time: 77ns
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Number of Terminations: 3
- REACH SVHC: No SVHC
- Factory Lead Time: 13 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Threshold Voltage: 2V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 17 ns
- Power Dissipation: 160W
- Width: 4.82mm
- Turn-Off Delay Time: 41 ns
- Avalanche Energy Rating (Eas): 200 mJ
- Continuous Drain Current (ID): 59A
- Length: 10.6426mm
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
- Rds On (Max) @ Id, Vgs: 18m Ω @ 35A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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