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AUIRF7103Q123
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AUIRF7103Q
  • Manufacturer No:
    AUIRF7103Q
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    AUIRF7103Q
  • SKU:
    2676418
  • Description:
    MOSFET 2N-CH 50V 3A 8SOIC

AUIRF7103Q Details

MOSFET 2N-CH 50V 3A 8SOIC

AUIRF7103Q Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Terminations: 8
  • Drain Current-Max (Abs) (ID): 3A
  • Qualification Status: Not Qualified
  • DS Breakdown Voltage-Min: 50V
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • FET Feature: Standard
  • Published: 2003
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Additional Feature: HIGH RELIABILITY
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Power - Max: 2.4W
  • FET Type: 2 N-Channel (Dual)
  • JEDEC-95 Code: MS-012AA
  • Drain-source On Resistance-Max: 0.13Ohm
  • Rds On (Max) @ Id, Vgs: 130m Ω @ 3A, 10V
  • Number of Elements: 2
  • RoHS Status: RoHS Compliant
  • Surface Mount: YES
  • Part Status: Obsolete
  • Packaging: Tube
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Drain to Source Voltage (Vdss): 50V
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • Transistor Element Material: SILICON
  • Reach Compliance Code: compliant
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Operating Temperature: -55°C~175°C TJ
  • JESD-30 Code: R-PDSO-G8
  • Pulsed Drain Current-Max (IDM): 25A
  • Series: HEXFET?
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Avalanche Energy Rating (Eas): 22 mJ
  • Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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