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AUIRFR5305123
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AUIRFR5305
  • Manufacturer No:
    AUIRFR5305
  • Manufacturer:
    Infineon
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    AUIRFR5305
  • SKU:
    6398647
  • Description:
    P-Channel 55 V 31A (Tc) 110W (Tc) Surface Mount D-Pak

AUIRFR5305 Details

P-Channel 55 V 31A (Tc) 110W (Tc) Surface Mount D-Pak

AUIRFR5305 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Packaging: Tube
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Published: 2006
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature: -55°C~175°C TJ
  • Factory Lead Time: 26 Weeks
  • Drain to Source Voltage (Vdss): 55V
  • JESD-30 Code: R-PSSO-G2
  • Length: 6.73mm
  • FET Type: P-Channel
  • Series: HEXFET?
  • Additional Feature: AVALANCHE RATED
  • JEDEC-95 Code: TO-252AA
  • Resistance: 65mOhm
  • Threshold Voltage: -2V
  • Power Dissipation-Max: 110W Tc
  • Rise Time: 66 ns
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Drain to Source Breakdown Voltage: -55V
  • Rds On (Max) @ Id, Vgs: 65m Ω @ 16A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Time@Peak Reflow Temperature-Max (s): 30
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Height: 2.39mm
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Vgs (Max): ±20V
  • Subcategory: Other Transistors
  • Case Connection: DRAIN
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Width: 6.22mm
  • Turn On Delay Time: 14 ns
  • Continuous Drain Current (ID): 31A
  • Power Dissipation: 110W
  • Turn-Off Delay Time: 39 ns
  • Fall Time (Typ): 63 ns
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 31A Tc
  • Avalanche Energy Rating (Eas): 280 mJ

Infineon — Manufacturer Introduction

Infineon
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.

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